1/9 september 2003 new datasheet according to pcn dsg/ct/2c13 marking: b70nfs03l @ stb70nfs03l n-channel 30v - 0.0075 w - 70a d2pak stripfet? mosfet plus schottky rectifier description this product associates a power mosfet of the stmicroelectronics unique single feature size strip-based process and a low drop schottky di- ode. the transistore shows the best trade-off be- tween on-resistance and gate charge. used as low side in buck regulators, the product is the solution in terms of conduction losses and space saving. mosfet absolute maximum ratings schottky absolute maximum ratings main product characteristics mosfet v dss r ds(on) i d 30 v < 0.0095 w 70 a schottky i f(av) v rrm v f(max) 3 a 30 v 0.51 v symbol parameter value unit v ds dain-source voltage (v gs = 0) 30 v v dgr drain-gate voltage (r gs = 20 k w ) 30 v v gs gate- source voltage 18 v i d drain current (continuous) at t c = 25c 70 a i d drain current (continuous) at t c = 100c 50 a i dm ( ) drain current (pulsed) 280 a p tot total dissipation at t c = 25c 100 w derating factor 0.67 w/c dv/dt (1) peak diode recovery voltage slope 5.5 v/ns e as (2) single pulse avalanche energy 500 mj t stg storage temperature -55 to 175 c t j operating junction temperature symbol parameter value unit v rrm repetitive peak reverse voltage 30 v i f(rms) rms forward curren 20 a i f(av) average forward current t l =125 o c d =0.5 3a i fsm surge non repetitive forward current tp= 10 ms sinusoidal 75 a dv/dt critical rate of rise of reverse voltage 10000 v/ m s 1 3 d 2 pak to-263 internal schematic diagram ( ) current limited by the package (1) i sd 70a, di/dt 350a/s, v dd v (br)dss , t j t jmax (2) starting t j = 25 o c, i d = 35a, v dd = 25v
stb70nfs03l 2/9 termal data electrical characteristics (t j = 25 c unless otherwise specified) off on (* ) schottcky static electrical characteristics dynamic rthj-case rthj-amb t l thermal resistance junction-case thermal resistance junction-ambient maximum lead temperature for soldering purpose max max 1.5 62.5 300 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 18 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 1v r ds(on) static drain-source on resistance v gs = 10 v i d = 35 a v gs = 5 v i d = 18 a 0.0075 0.0135 0.0095 0.018 w w symbol parameter test conditions min. typ. max. unit i r (*) reversed leakage current t j = 25 o c v r = 30 v t j = 125 o c v r = 30 v 0.03 0.2 100 ma ma v f (*) forward voltage drop t j = 25 o c i f = 3 a t j = 125 o c i f = 3 a 0.42 0.51 0.46 v v symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds = 25 i d = 35 a 25 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 1440 560 135 pf pf pf
3/9 stb70nfs03l switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 15 v i d = 35 a r g = 4.7 w v gs = 5 v (resistive load, figure 1) 22 165 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 15v i d = 70a v gs =5v (see test circuit, figure 2) 22.5 9 12 30 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 15 v i d = 35 a r g = 4.7 w, v gs = 5 v (resistive load, figure 1) 21 25 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 70 280 a a v sd (*) forward on voltage i sd = 70 a v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 70 a di/dt = 100a/s v dd = 20 v t j = 150c (see test circuit, figure 3) 42 52 2.5 ns nc a electrical characteristics (continued) . .
stb70nfs03l 4/9 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/9 stb70nfs03l . . normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage vs temperature. . .
stb70nfs03l 6/9 fig. 2: gate charge test circuit fig. 3: test circuit for diode recovery behaviour fig. 1: switching times test circuits for resistive load
7/9 stb70nfs03l dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.028 0.037 b2 1.14 1.7 0.045 0.067 c 0.45 0.6 0.018 0.024 c2 1.21 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.394 0.409 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.591 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.069 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 8 0 8 d 2 pak mechanical data
stb70nfs03l 8/9 dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0075 0.082 r50 1.574 t 0.25 0.35 .0.0098 0.0137 w 23.7 24.3 0.933 0.956 dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data * on sales type tube shipment (no suffix)* tape and reel shipment (suffix t4)* d 2 pak footprint tape mechanical data
9/9 stb70nfs03l information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics all other names are the property of their respective owners. a 2003 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco -singapore - spain - sweden - switzerland - united kingdom - united states. www.st.com
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